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DATA SHEET
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
* High hFE and low VCE(sat): hFE 100 (VCE = -2 V, IC = -2 A) V CE(sat) 0.3 V (IC = -6 A, IB = -0.3 A) * Full-mold package that does not require an insulating board or bushing
QUALITY GRADES
* Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode Connection 1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25C) PT (Ta = 25C) Tj Tstg Ratings -100 -60 -7.0 -10 -20 -5.0 30 2.0 150 -55 to +150 Unit V V V A A A W W C C
* PW 300 s, duty cycle 10%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16126EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan
(c)
2002
2SA1743
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter Collector to emitter voltage Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS) Conditions IC = -6.0 A, IB = -0.6 A, L = 1 mH IC = -6.0 A, IB1 = -IB2 = -0.6 A, VBE(OFF) = 1.5 V, L = 180 H, clamped VCB = -60 V, IE = 0 VCE = -60 V, RBE = 50 , Ta = 125C VCE = -60 V, VBE(OFF) = 1.5 V VCE = -60 V, VBE(OFF) = 1.5 V, Ta = 125C VEB = -5.0 V, IC = 0 VCE = -2.0 V, IC = -1.0 A VCE = -2.0 V, IC = -2.0 A VCE = -2.0 V, IC = -6.0 A IC = -6.0 A, IB = -0.3 A IC = -8.0 A, IB = -0.4 A IC = -6.0 A, IB = -0.3 A IC = -8.0 A, IB = -0.4 A VCB = -10 V, IE = 0, f = 1.0 MHz VCE = -10 V, IC = -1.0 A IC = -6.0 A, RL = 8.3 , IB1 = -IB2 = -0.3 A, VCC -50 V Refer to the test circuit. Fall time tf 0.3 230 80 0.3 1.5 100 100 60 -0.3 -0.5 -1.2 -1.5 V V V V pF MHz 400 MIN. -60 -60 -10 -1.0 -10 -1.0 -10 TYP. MAX. Unit V V
Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current
ICBO ICER ICEX1 ICEX2
A
mA
A
mA
Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time
IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg
A
s s s
* Pulse test PW 350 s, duty cycle 2%
hFE CLASSIFICATION
Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current waveform
Collector current waveform
2
Data Sheet D16126EJ1V0DS
2SA1743
TYPICAL CHARACTERISTICS (Ta = 25C)
Total Power Dissipation PT (W)
Case Temperature TC (C) Case Temperature TC (C)
Single pulse
Collector Current IC (A)
Collector Current IC (A)
IC Derating dT (%)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance Rth(j-c) (C/W)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D16126EJ1V0DS
3
4
Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Collector Current IC (A) Collector Current IC (A) Collector to Emitter Voltage VCE (V) Gain Bandwidth Product fT (MHz)
Pulse test
Collector Capacitance Cob (pF)
Collector to Base Voltage VCB (V)
Data Sheet D16126EJ1V0DS
Fall Time tf (s) StorageTime tstg (s) Turn-On Time ton (s)
DC Current Gain hFE
Collector Current IC (A)
Collector Current IC (A)
Collector Current IC (A)
Pulse test
2SA1743
2SA1743
[MEMO]
Data Sheet D16126EJ1V0DS
5
2SA1743
* The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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